HCTS365HMSR INTERSIL [Intersil Corporation], HCTS365HMSR Datasheet
HCTS365HMSR
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HCTS365HMSR Summary of contents
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... CMOS/SOS Logic Family Ordering Information PART NUMBER TEMPERATURE RANGE HCTS365DMSR HCTS365KMSR HCTS365D/Sample HCTS365K/Sample HCTS365HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCTS365MS Hex Buffer/Line Driver Non-Inverting Pinouts MIL-STD-1835 CDIP2-T16, LEAD FINISH C 2 ...
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Functional Diagram 1 OE1 15 OE2 OE1 HCTS365MS ONE OF THE IDENTICAL CIRCUITS TRUTH TABLE INPUTS OE2 ...
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Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...
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TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Data to Output TPLH VCC = 4.5V TPHL VCC = 4.5V Enable to Output TPZL VCC = 4.5V TPZH VCC = 4.5V Disable to Output TPLZ VCC = 4.5V TPHZ VCC = ...
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TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND Three-State Output IOZ VCC = 5.5V, Applied Voltage = 0V or VCC Leakage Current Noise Immunity FN ...
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CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONNECTIONS (Note ...
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Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...
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AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 Three-State Low Timing Diagrams VIH INPUT VS ...
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Three-State High Timing Diagrams VIH INPUT VS VIL TPZH VOH VT OUTPUT VOZ THREE-STATE HIGH VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VT 1.30 VW 3.60 GND 0 All Intersil semiconductor products are manufactured, assembled and tested ...
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Die Characteristics DIE DIMENSIONS: 108 x 106 mils METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 ...