KMM366S403CTL SAMSUNG [Samsung semiconductor], KMM366S403CTL Datasheet - Page 6

• Manufacturer Part Number: KMM366S403CTL
• Description: PC66 SDRAM MODULE
• Manufacturer: SAMSUNG [Samsung semiconductor]

Notes :
KMM366S403CTL
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
I
Page burst
2Banks activated
t
t
CKE
RC
OL
OL
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
Test Condition
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
(max), t
(max), t
CC
CC
A
= 15ns
= 15ns
= 0 to 70 C)
V
V
V
V
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
=
=
CC
CC
CC
CC
= 15ns
= 15ns
=
=
Latency
CAS
3
2
PC66 SDRAM MODULE
Version
800
240
400
240
960
880
800
16
16
64
32
16
16
-0
REV. 3 Mar. '98
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2