KMM366S403CTL SAMSUNG [Samsung semiconductor], KMM366S403CTL Datasheet - Page 5

• Manufacturer Part Number: KMM366S403CTL
• Description: PC66 SDRAM MODULE
• Manufacturer: SAMSUNG [Samsung semiconductor]

KMM366S403CTL
Notes :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
MAXIMUM TRACE LENGTHS
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current (Inputs)
Input leakage current (I/O pins)
Input capacitance (A0 ~ A10/AP, BA0)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK3)
Input capacitance (CS0 ~ CS3)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
A0 ~ A10/AP
Signal
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. Dout is disabled, 0V
RAS
CAS
BA0
WE
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is 3ns.
(max) = 5.6V AC. The overshoot voltage duration is 3ns.
Parameter
supply relative to Vss
Parameter
(V
DD
V
Max lengths
IN
= 3.3V, T
V
8.0
8.0
8.0
8.0
8.0
DDQ.
V
OUT
Symbol
A
V
V
V
V
V
= 23 C, f = 1MHz, V
I
I
OH
DD
OL
IL
IL
IH
IL
V
DDQ.
Inches
Inches
Inches
Inches
Inches
V
Unit
V
Symbol
Min
-0.3
Symbol
DD
3.0
2.0
2.4
-16
IN
C
-3
C
C
C
C
C
C
-
T
OUT
, V
I
P
, V
IN1
IN2
IN3
IN4
IN5
IN6
STG
OS
D
REF
OUT
DDQ
SS
= 0V, T
= 1.4V
DQM0 ~ DQM7
Typ
A
CKE0 ~ CKE1
3.3
3.0
DQ0 ~ DQ63
0
-
-
-
-
= 0 to 70 C)
200 mV)
CS0 ~ CS3
Signal
Min
60
60
35
25
25
15
10
V
DDQ
Max
-55 ~ +150
3.6
0.8
0.4
16
-1.0 ~ 4.6
-1.0 ~ 4.6
3
-
+0.3
Value
PC66 SDRAM MODULE
16
50
Max lengths
5.5
4.0
3.0
2.0
Max
90
90
55
35
35
25
20
Unit
uA
uA
V
V
V
V
V
REV. 3 Mar. '98
I
I
OH
OL
Unit
Inches
Inches
Inches
Inches
mA
W
Unit
V
V
Note
Unit
C
= -2mA
= 2mA
3,4
pF
pF
pF
pF
pF
pF
pF
1
2
3