KMM366S1623CT-G8 SAMSUNG [Samsung semiconductor], KMM366S1623CT-G8 Datasheet - Page 7
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KMM366S1623CT-G8
Manufacturer Part Number
KMM366S1623CT-G8
Description
PC100 SDRAM MODULE Preliminary
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KMM366S1623CT-G8.pdf
(10 pages)
KMM366S1623CT
Notes :
AC CHARACTERISTICS
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
SAC
t
t
t
SHZ
SLZ
OH
CC
CH
SS
SH
CL
Min
10
8
3
3
3
3
2
1
1
-8
1000
Max
6
6
6
6
Min
10
10
3
3
3
3
2
1
1
-H
1000
Max
Preliminary
PC100 SDRAM MODULE
6
6
6
6
Min
10
12
3
3
3
3
2
1
1
-L
1000
Max
REV. 1 June 1998
6
7
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2