KMM366S1623CT-G8 SAMSUNG [Samsung semiconductor], KMM366S1623CT-G8 Datasheet - Page 5

• Manufacturer Part Number: KMM366S1623CT-G8
• Description: PC100 SDRAM MODULE Preliminary
• Manufacturer: SAMSUNG [Samsung semiconductor]

Notes :
KMM366S1623CT
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Operating current
(one Bank Active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length =1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
I
Page burst
2Banks activated
t
t
CKE
RC
OL
OL
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
Test Condition
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
(max), t
(max), t
CC
CC
A
= 15ns
= 15ns
= 0 to 70 C)
V
V
V
V
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
=
=
CC
CC
CC
CC
= 15ns
= 15ns
=
=
Latency
CAS
3
2
Preliminary
PC100 SDRAM MODULE
760
920
760
-8
Version
2,000
720
192
320
160
760
760
-H
16
16
96
32
32
16
REV. 1 June 1998
720
760
720
-L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2