K4M56323LE-MC1H SAMSUNG [Samsung semiconductor], K4M56323LE-MC1H Datasheet - Page 6

• Manufacturer Part Number: K4M56323LE-MC1H
• Description: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4M56323LE - M(E)E/N/S/C/L/R
AC OPERATING TEST CONDITIONS
Output
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Figure 1. DC Output Load Circuit
500Ω
Parameter
VDDQ
500Ω
30pF
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
(V
DD
= 2.5V ± 0.2V, T
0.9 x V
Output
See Figure 2
0.5 x V
0.5 x V
tr/tf = 1/1
Value
A
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
DDQ
Figure 2. AC Output Load Circuit
DDQ
DDQ
/ 0.2
Z0=50Ω
Mobile-SDRAM
Vtt=0.5 x VDDQ
50Ω
30pF
Unit
ns
February 2004
V
V
V