K4M56323LE-MC1H SAMSUNG [Samsung semiconductor], K4M56323LE-MC1H Datasheet - Page 5

• Manufacturer Part Number: K4M56323LE-MC1H
• Description: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC CHARACTERISTICS
K4M56323LE - M(E)E/N/S/C/L/R
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
4. K4M56323LE-M(E)E/C**
5. K4M56323LE-M(E)N/L**
6. K4M56323LE-M(E)S/R**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
In commercial Temp : Max 40°C/Max 70°C, In extended Temp : Max 40°C/Max 85°C
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC
CC
CC
PS CKE & CLK ≤ V
NS
PS CKE & CLK ≤ V
NS
4
5
6
N
N
P
P
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
CCD
O
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
= 0V, T
IH
IH
-S/R
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
= ∞
= ∞
A
= -25 to 85°C for Extended, -25 to 70°C for Commercial)
Internal TCSR
CC
CC
-E/C
-N/L
CC
CC
= 10ns
= 10ns
4Banks
2Banks
1Bank
= ∞
= ∞
140
180
300
-80
Max 40
600
500
450
Version
1500
1000
Mobile-SDRAM
-1H
140
150
290
1.2
1.2
20
10
45
40
8
8
Max 85/70
1000
800
700
130
150
270
-1L
February 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
°C
uA
Note
1
1
2
4
5
3
6