HYB5117805BSJ-50- SIEMENS [Siemens Semiconductor Group], HYB5117805BSJ-50- Datasheet - Page 8

• Manufacturer Part Number: HYB5117805BSJ-50-
• Description: 2M x 8 - Bit Dynamic RAM 2k Refresh
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics
T
Parameter
Data to CAS low delay
Data to OE low delay
CAS high to data delay
OE high to data delay
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time t
Write command to CAS lead time t
Data setup time
Data hold time
Read-modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time t
OE command hold time
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle
time
CAS precharge time
Access time from CAS precharge t
Output data hold time
RAS pulse width in EDO mode
CAS precharge to RAS Delay
Semiconductor Group
A
= 0 to 70 °C,
V
CC
= 5 V
(cont’d)
10 %, t
5)6)
T
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
= 2 ns
DZC
DZO
CDD
ODD
WCH
WP
WCS
RWL
CWL
DS
DH
RWC
RWD
CWD
AWD
OEH
HPC
CP
CPA
COH
RAS
RHPC
min.
0
0
10
10
8
8
0
13
13
0
8
113
64
27
39
10
20
8
–
5
50
27
8
-50
max. min.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
27
–
200k 60
–
Limit Values
0
0
13
13
10
10
0
15
15
0
10
138
77
32
47
13
25
10
–
5
32
HYB5117805BSJ-50/-60/-70
-60
max. min.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
32
–
200k 70
–
0
0
15
15
10
10
0
17
17
0
12
162
89
36
54
15
30
10
–
5
37
2M x 8-EDO DRAM
-70
max.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
37
–
200k ns
–
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
13
13
14
14
15
16
16
15
15
15
7
16E