HYB5117805BSJ-50- SIEMENS [Siemens Semiconductor Group], HYB5117805BSJ-50- Datasheet - Page 7

• Manufacturer Part Number: HYB5117805BSJ-50-
• Description: 2M x 8 - Bit Dynamic RAM 2k Refresh
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

AC Characteristics 5)6)
T
Parameter
common parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period
Read Cycle
Access time from RAS
Access time from CAS
Access time from column address t
OE access time
Column address to RAS lead time t
Read command setup time
Read command hold time
Read command hold time
referenced to RAS
CAS to output in low-Z
Output buffer turn-off delay
Output turn-off delay from OE
Semiconductor Group
A
= 0 to 70 °C,
V
CC
= 5 V
10 %, t
T
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
= 2 ns
RC
RP
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
CSH
CRP
T
REF
RAC
CAC
AA
OEA
RAL
RCS
RCH
RRH
CLZ
OFF
OEZ
min.
84
30
50
8
0
8
0
8
12
10
13
40
5
1
–
–
–
–
–
25
0
0
0
0
0
0
7
-50
max. min.
–
–
10k
10k
–
–
–
–
37
25
–
50
32
50
13
25
13
–
–
–
–
–
13
13
Limit Values
104
40
60
10
0
10
0
10
14
12
15
50
5
1
–
–
–
–
–
30
0
0
0
0
0
0
HYB5117805BSJ-50/-60/-70
-60
max. min.
–
–
10k
10k
–
–
–
–
45
30
–
–
–
50
32
60
15
30
15
–
–
–
–
–
15
15
124
50
70
12
0
10
0
12
14
12
17
60
5
1
–
–
–
–
–
35
0
0
0
0
0
0
2M x 8-EDO DRAM
-70
max.
–
–
10k
10k
–
–
–
–
53
35
–
–
–
50
32
70
17
35
17
–
–
–
–
–
17
17
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
8, 9
8, 9
8,10
11
11
8
12
12
16E