BSP372_08 INFINEON [Infineon Technologies AG], BSP372_08 Datasheet
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BSP372_08
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BSP372_08 Summary of contents
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SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • 0.8 ...2.0 V GS(th) • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Type ...
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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb 1,5 mm with 6 ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 1 DS(on)max, D Input capacitance MHz GS DS ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C A Inverse diode direct current,pulsed ˚C A Inverse diode forward voltage 1 ...
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Power dissipation = ƒ tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : D ...
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Typ. output characteristics = ƒ parameter µ 3 tot 3 2.8 2.4 2.0 1.6 1.2 ...
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Drain-source on-resistance = ƒ (on) j parameter 1 1.0 Ω 0 (on) 0.7 0.6 0.5 98% 0.4 typ 0.3 0.2 0.1 0.0 -60 -20 ...
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T Avalanche energy E AS parameter 1 Ω 23 ...
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Rev 2.0 9 BSP372 2008-03-31 ...