BSP324_09 INFINEON [Infineon Technologies AG], BSP324_09 Datasheet
BSP324_09
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BSP324_09 Summary of contents
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SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package PG-SOT223 BSP324 Maximum Ratings Parameter Continuous drain current T ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot A BSP324 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area parameter ...
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Typ. output characteristic parameter ° 0.6 0.4 0.3 0.2 0 Typ. transfer characteristics ≥ ...
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Drain-source on-state resistance DS(on) j parameter : BSP324 130 Ω 110 100 98 typ 10 0 -60 -20 20 ...
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Typ. gate charge parameter 0.17 A pulsed BSP324 0 max 8 0 max 0 max 6 4 ...
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Rev 2.1 Page 8 BSP324 2009-08-18 ...