CYM1846V33P8-12C CYPRESS [Cypress Semiconductor], CYM1846V33P8-12C Datasheet

no-image

CYM1846V33P8-12C

Manufacturer Part Number
CYM1846V33P8-12C
Description
512K x 32 3.3V Static RAM Module
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Features
Functional Description
The CYM1846V33 is a high-performance 3.3V 16-megabit
static RAM module organized as 512K words by 32 bits. This
Cypress Semiconductor Corporation
Document #: 38-05275 Rev. **
• High-density 3.3V 16-megabit SRAM module
• 32-bit Standard Footprint supports densities from
• High-speed SRAMs
• Low active power
• 72 pins
• Available in ZIP, SIMM format
16K x 32 through 2M x 32
— Access time of 12 ns
— 1.650W (max.) at 12 ns
Logic Block Diagram
A
0
–A
CS
CS
CS
CS
WE
OE
18
1
2
3
4
19
512K x 8
512K x 8
512K x 8
512K x 8
SRAM
SRAM
SRAM
SRAM
8
8
8
8
I/O
I/O
I/O
I/O
3901 North First Street
0
24
7
16
–I/O
–I/O
–I/O
–I/O
7
15
31
23
512K x 32 3.3V Static RAM Module
PD
PD
PD
PD
0
1
2
3
- OPEN
- OPEN
- GND
- OPEN
PRELIMINARY
module is constructed from four 512K x 8 SRAMs in SOJ pack-
ages mounted on an epoxy laminate substrate. Four chip se-
lects are used to independently enable the four bytes. Reading
or writing can be executed on individual bytes or any combina-
tion of multiple bytes through proper use of selects.
The CYM1846V33 is designed for use with standard 72-pin
SIMM sockets. The pinout is downward compatible with the
64-pin
CYM1831, CYM1836, and CYM1841). Thus, a single mother-
board design can be used to accommodate memory depth
ranging from 16K words (CYM1821) to 1,024K words
(CYM1851). The CYM1846V33 is offered in vertical SIMM
configuration and is available with either tin-lead or 10
micro-inches of gold flash on the edge contacts.
Presence detect pins (PD
memory density in applications where modules with alternate
word depths can be interchanged.
JEDEC
San Jose
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
Pin Configuration
CS
CS
PD
PD
I/O
I/O
I/O
I/O
V
I/O
I/O
I/O
I/O
WE
A
A
A
A
A
A
NC
NC
NC
CC
A
A
A
ZIP/SIMM
14
16
16
17
18
19
10
11
12
13
20
21
22
23
3
0
0
1
2
3
7
8
9
4
5
6
7
1
3
ZIP/SIMM
Top View
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
0
PD
CA 95134
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
1
3
5
7
9
3
module
) are used to identify module
CS
NC
PD
GND
PD
I/O
I/O
I/O
I/O
A
A
A
I/O
I/O
I/O
I/O
GND
A
CS
A
OE
I/O
I/O
I/O
I/O
A
A
A
V
A
I/O
I/O
I/O
I/O
A
NC
0
1
2
15
17
3
4
5
CC
6
18
Revised March 15, 2002
CYM1846V33
2
1
8
9
10
11
12
13
14
15
24
25
26
27
28
29
30
31
2
4
family
408-943-2600
(CYM1821,

Related parts for CYM1846V33P8-12C

CYM1846V33P8-12C Summary of contents

Page 1

... Document #: 38-05275 Rev. ** PRELIMINARY 512K x 32 3.3V Static RAM Module module is constructed from four 512K x 8 SRAMs in SOJ pack- ages mounted on an epoxy laminate substrate. Four chip se- lects are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any combina- tion of multiple bytes through proper use of selects ...

Page 2

Selection Guide Maximum Access Time (ns) Maximum Operating Current (mA) Maximum Standby Current (mA) Shaded area contains advance information. [1] Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. –55°C ...

Page 3

AC Test Loads and Waveforms R1 315 5V OUTPUT OUTPUT R2 351 30 pF INCLUDING JIG AND SCOPE (a) Equivalent to: THÉ VENIN EQUIVALENT 167 OUTPUT Switching Characteristics Over the Operating Range Parameter READ CYCLE t Read Cycle Time RC ...

Page 4

Switching Characteristics Over the Operating Range Parameter Description READ CYCLE t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CS LOW to Data Valid ACS t OE LOW to Data ...

Page 5

Switching Waveforms (continued) [8,10] Read Cycle No HIGH IMPEDANCE DATA OUT t LZCS SUPPLY CURRENT Write Cycle No. 1 (WE Controlled) ADDRESS DATA IN DATA OUT DATA UNDEFINED Note: ...

Page 6

... Ordering Information Speed (ns) Ordering Code 12 CYM1846V33PM-12C CYM1846V33P8-12C CYM1846V33PZ-12C 15 CYM1846V33PM-15C CYM1846V33P8-15C CYM1846V33PZ-15C 20 CYM1846V33PM-20C CYM1846V33P8-20C CYM1846V33PZ-20C 25 CYM1846V33PM-25C CYM1846V33P8-25C CYM1846V33PZ-25C Shaded area contains advance information. Note: 11 goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. ...

Page 7

... Speed (ns) Ordering Code 35 CYM1846V33PM-35C CYM1846V33P8-35C CYM1846V33PZ-35C Package Diagrams Document #: 38-05275 Rev. ** © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

Page 8

... Document Title: CYM1846V33 512K x 32 3.3V Static RAM Module Document Number: 38-05275 Issue REV. ECN NO. Date ** 114176 3/19/02 Document #: 38-05275 Rev. ** PRELIMINARY Orig. of Change DSG Change from Spec number: 38-M-00089 to 38-05275 CYM1846V33 Description of Change Page ...

Related keywords