K9F4G08U0M SAMSUNG [Samsung semiconductor], K9F4G08U0M Datasheet - Page 17

• Manufacturer Part Number: K9F4G08U0M
• Description: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9K8G08U1M
K9F4G08U0M
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
Figure 5. Read Operation with CE don’t-care.
CLE
ALE
CE
WE
I/Ox
CLE
ALE
R/B
CE
WE
RE
I/Ox
CE
WE
00h
80h
Address(5Cycles)
t
CS
Address(5Cycle)
t
WP
t
CH
30h
Data Input
t
R
17
I/O
CE
RE
0
~
7
CE don’t-care
t
CEA
Data Output(serial access)
t
REA
CE don’t-care
FLASH MEMORY
Data Input
out
Advance
10h