M366S1623DT0-C1H SAMSUNG [Samsung semiconductor], M366S1623DT0-C1H Datasheet - Page 7
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M366S1623DT0-C1H
Manufacturer Part Number
M366S1623DT0-C1H
Description
PC100 Unbuffered DIMM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M366S1623DT0-C1H.pdf
(9 pages)
AC CHARACTERISTICS
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Notes :
M366S1623DT0
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
SAC
t
t
SHZ
t
SLZ
OH
CC
CH
SS
SH
CL
Min
8
3
3
3
2
1
1
-
-
-80
1000
Max
6
6
-
-
Min
10
10
3
3
3
3
2
1
1
-1H
1000
Max
PC100 Unbuffered DIMM
6
6
6
6
Min
10
12
3
3
3
3
2
1
1
-1L
Rev. 0.0 Jun. 1999
1000
Max
6
7
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2