M366S1623DT0-C1H SAMSUNG [Samsung semiconductor], M366S1623DT0-C1H Datasheet - Page 4

• Manufacturer Part Number: M366S1623DT0-C1H
• Description: PC100 Unbuffered DIMM
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note :
Note :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
M366S1623DT0
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
CS (CS0~CS3)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
DD
Parameter
supply relative to Vss
Pin
(V
V
DD
IN
= 3.3V, T
V
DDQ.
A
= 23 C, f = 1MHz, V
V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
Symbol
V
Symbol
DD
C
IN
C
C
C
C
C
T
C
DQM
ADD
OUT
CKE
CLK
, V
I
, V
P
STG
CS
OS
IN
Min
-0.3
-10
3.0
2.0
2.4
D
REF
-
OUT
DDQ
SS
= 0V, T
= 1.4V
3ns.
3ns.
A
= 0 to 70 C)
200 mV)
Typ
3.3
3.0
0
-
-
-
Min
45
45
25
15
15
10
13
V
-55 ~ +150
DDQ
PC100 Unbuffered DIMM
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
10
Value
-
+0.3
16
50
Max
85
85
45
21
25
15
18
Unit
Rev. 0.0 Jun. 1999
uA
V
V
V
V
V
I
OH
I
OL
Unit
mA
W
Unit
V
V
Note
C
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
1
2
3