RHF350 STMICROELECTRONICS [STMicroelectronics], RHF350 Datasheet - Page 4

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RHF350

Manufacturer Part Number
RHF350
Description
Rad-hard 550 MHz low noise operational amplifier
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Electrical characteristics
2
Note:
Table 4.
Table 5.
4/23
TID
Heavy-ions
DC performance
Symbol
PSRR
CMR
SVR
I
I
V
I
CC
ib+
ib-
io
Input offset voltage
Non-inverting input bias
current
Inverting input bias current
Common mode rejection ratio
20 log ( V
Supply voltage rejection ratio
20 log ( V
Power supply rejection ratio
20 log ( V
Supply current
High dose rate (50 - 300 rad / sec.) up to
SEL immunity (at 125 °C) up to
SEU characterized up to
Electrical characteristics
All electrical parameters apply both pre and post irradiation. Post irradiation data are
guaranteed by qualification, they are not tested in production.
Radiations
Electrical characteristics for V
Parameter
ic
CC
CC
/ V
/ V
/ V
io
out
io
)
)
)
No load
V
V
V
ic
CC
CC
Doc ID 15604 Rev 4
= ±1 V
CC
= 3.5 V to 5 V
= 200 mV
Test conditions
= ±2.5 V, (unless otherwise specified)
pp
at 1 kHz
Temp.
+125 °C
+125 °C
+125 °C
+125 °C
+125 °C
+125 °C
+25 °C
+25 °C
+25 °C
+25 °C
+25 °C
+25 °C
+25 °C
-55 °C
-55 °C
-55 °C
-55 °C
-55 °C
-55 °C
(1)
Value
300
110
Min.
50
54
50
55
68
55
-4
-4
-4
Typ.
0.4
0.8
8.5
2.5
1.8
3.8
55
57
58
87
87
88
51
1
9
9
2
4
4
Max.
MeV.cm²/mg
4.9
4.9
4.9
35
25
35
35
20
25
4
4
4
Unit
krad
RHF350
Unit
mV
mA
dB
dB
dB
A
A

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