SPA11N60CFD_1012 INFINEON [Infineon Technologies AG], SPA11N60CFD_1012 Datasheet - Page 3
SPA11N60CFD_1012
Manufacturer Part Number
SPA11N60CFD_1012
Description
CoolMOS Power Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
1.SPA11N60CFD_1012.pdf
(12 pages)
Rev. 1.4
0)
1)
2)
3)
4)
5)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
J-STD20 and JESD22
Limited only by maximum temperature.
Pulse width t
Repetitive avalanche causes additional power losses that can be calculated as P
C
C
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
4)
5)
is a fixed capacitance that gives the same stored energy as C
p
limited by T
j,max
Symbol Conditions
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
plateau
iss
oss
rss
o(er)
o(tr)
gs
gd
g
V
f =1 MHz
V
to 480 V
V
V
R
V
V
page 3
GS
GS
DD
GS
DD
GS
G
=6.8
=0 V, V
=0 V, V
=480 V,
=10 V, I
=480 V, I
=0 to 10 V
DS
DS
D
oss
=11 A,
D
oss
=25 V,
=0 V
=11 A,
while V
while V
DS
DS
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
min.
=E
-
-
-
-
-
-
-
-
-
-
-
-
-
AR
*f.
Values
1200
typ.
390
7.5
30
45
85
34
18
43
23
48
7
9
SPA11N60CFD
max.
64
DSS.
-
-
-
-
-
-
-
-
-
-
-
-
DSS.
Unit
pF
ns
nC
V
2010-12-21