BSP170P_09 INFINEON [Infineon Technologies AG], BSP170P_09 Datasheet - Page 3
BSP170P_09
Manufacturer Part Number
BSP170P_09
Description
SIPMOS Small-Signal-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
1.BSP170P_09.pdf
(9 pages)
Rev 2.52
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
g
rr
V
f =1 MHz
V
10 V, I
R
V
V
T
V
T
V
di
page 3
A
j
GS
DD
DD
GS
GS
R
G
=25 °C
F
=25 °C
=30 V, I
/dt =100 A/µs
=6 Ω
=0 V, V
=-30 V, V
=-48 V, I
=0 to -10 V
=0 V, I
D
=-1.9 A,
F
F
DS
=-1.9 A,
=|I
D
=-25 V,
GS
=-1.9 A,
S
|,
=-
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-4.34
-0.83
typ.
328
105
-1.4
-4.9
-10
38
14
28
92
60
36
41
-
-
max.
-1.98
-1.9
-7.4
-7.6
-1.1
410
135
138
-14
48
21
42
90
54
62
BSP 170 P
-
Unit
pF
ns
nC
V
A
V
ns
nC
2009-02-16