HYS64V64220GU INFINEON [Infineon Technologies AG], HYS64V64220GU Datasheet - Page 6
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HYS64V64220GU
Manufacturer Part Number
HYS64V64220GU
Description
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
1.HYS64V64220GU.pdf
(15 pages)
INFINEON Technologies
Operating Currents per SDRAM Component
T
Operating current
t
Outputs open, Burst Length = 4, CL = 3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
Precharge stand-by current
in Power Down Mode
CS =
Precharge Stand-by Current
in Non-Power Down Mode
CS =
No operating current
t
active state (max. 4 banks)
Burst operating current
t
Read command cycling
Auto refresh current
t
Auto Refresh command cycling
Self refresh current
Self Refresh Mode, CKE = 0.2 V
Notes
1. All values are shown per one SDRAM component.
2. These parameters depend on the cycle rate. These values are measured at 133 MHz operation
3. These parameters are measured with continuous data stream during read access and all DQ
RC
CK
CK
CK
Parameter
A
frequency for -7 & -7.5 and at 100 MHz for -8 modules.
Input signals are changed once during
t
toggling. CL = 3 and BL = 4 are assumed and the
= 0 to 70
= min., CS =
= min.,
= min.,
=
CK
t
V
V
RC(MIN.)
= infinity.
IH(MIN.)
IH (MIN.)
o
,
, CKE
C,
, CKE
t
CK
V
V
=
DD
IH(MIN.)
t
CK(MIN.)
= 3.3 V
V
V
IL(MAX.)
IH(MIN.)
,
0.3 V
Test
Condition
–
t
t
CKE
CKE
–
–
CK
CK
t
CK
= min.
= min.
, excepts for
6
V
V
IH(MIN.)
IL(MAX.)
data out
Symbol -7/ -7.5
I
I
I
I
I
I
I
I
CC1
CC2P
CC2N
CC3N
CC3P
CC4
CC5
CC6
I
CC6
current is excluded.
and for stand-by currents when
230
2
40
50
10
150
240
3
HYS 64/72V64220GU
max.
SDRAM-Modules
170
2
30
45
10
100
220
3
-8
mA
mA
mA
mA
mA
mA
mA
mA
Unit Note
1, 2
1, 2
1, 2
1, 2
1, 2
1,2,3
1, 2
1
9.01