HYS64V4200GU-10 SIEMENS [Siemens Semiconductor Group], HYS64V4200GU-10 Datasheet - Page 14
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HYS64V4200GU-10
Manufacturer Part Number
HYS64V4200GU-10
Description
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.HYS64V4200GU-10.pdf
(15 pages)
SPD cont’d:
Semiconductor Group
Byte#
32-61 Superset information
128+ Unused storage locations
125
126
127
64-
29
30
31
32
33
34
35
62
63
Minimum RAS to CAS delay tRCD
Minimum RAS pulse width tRAS
Module Bank Density (per bank)
SDRAM input setup time
SDRAM input hold time
SDRAM data input setup time
SDRAM data input hold time
(may be used in future)
SPD Revision
Checksum for bytes 0 - 62
Manufacturers information (optional)
(FFh if not used)
Max. Frequency Specification
Support details
Description
14
Revision 1.2
SPD Entry
32 MByte
66 MHz
60 ns
2.5 ns
2.5 ns
Value
24 ns
1 ns
1 ns
HYS64(72)V4200/8220GU
4Mx64
3C
XX
AF
FF
7C
FF
18
08
25
10
25
10
12
66
-8
4Mx72
3C
XX
AF
FF
8E
FF
18
08
25
10
25
10
12
66
SDRAM-Modules
-8
Hex
8Mx72
3C
7D
XX
18
08
FF
66
FF
FF
25
10
25
10
12
-8
8Mx72
3C
XX
18
FF
8F
FF
FF
08
25
10
25
10
12
66
-8