MT58V1MV18D MICRON [Micron Technology], MT58V1MV18D Datasheet

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MT58V1MV18D

Manufacturer Part Number
MT58V1MV18D
Description
Manufacturer
MICRON [Micron Technology]
Datasheet
16Mb SYNCBURST
SRAM
FEATURES
• Fast clock and OE# access times
• Single +3.3V ±0.165Vor 2.5V ±0.125V power supply
• Separate +3.3V or 2.5V isolated output buffer
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL
• Three chip enables for simple depth expansion and
• Clock-controlled and registered addresses, data I/Os
• Internally self-timed WRITE cycle
• Burst control (interleaved or linear burst)
• Automatic power-down
• 100-pin TQFP package
• 165-pin FBGA package
• Low capacitive bus loading
• x18, x32, and x36 versions available
OPTIONS
• Timing (Access/Cycle/MHz)
• Configurations
• Packages
• Operating Temperature Range
*See page 34 for FBGA package marking guide.
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
(V
supply (V
WRITE
address pipelining
and control signals
3.5ns/6ns/166 MHz
4.0ns/7.5ns/133 MHz
5ns/10ns/100 MHz
3.3V V
2.5V V
100-pin TQFP (3-chip enable)
165-pin FBGA
Commercial (0ºC to +70ºC)
1 Meg x 18
1 Meg x 18
DD
512K x 32
512K x 36
512K x 32
512K x 36
)
DD
DD
, 3.3V or 2.5V I/O
, 2.5V I/O
DD
Q)
MT58L1MY18DT-7.5
Part Number Example:
TQFP MARKING*
MT58V512V32D
MT58V512V36D
MT58L512Y32D
MT58L512Y36D
MT58V1MV18D
MT58L1MY18D
None
-7.5
-10
-6
T
F
PIPELINED, DCD SYNCBURST SRAM
1
MT58L1MY18D, MT58V1MV18D,
MT58L512Y32D, MT58V512V32D,
MT58L512Y36D, MT58V512V36D
3.3V V
I/O, Pipelined, Double-Cycle Deselect
GENERAL DESCRIPTION
speed, low-power CMOS designs that are fabricated
using an advanced CMOS process.
18, 512K x 32, or 512K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single-clock in-
put (CLK). The synchronous inputs include all addresses,
all data inputs, active LOW chip enable (CE#), two
additional chip enables for easy depth expansion (CE2,
CE2#), burst control inputs (ADSC#, ADSP#, ADV#),
byte write enables (BWx#) and global write (GW#). Note
that CE2# is not available on the T Version.
(OE#), clock (CLK) and snooze enable (ZZ). There is also
16Mb: 1 MEG x 18, 512K x 32/36
NOTE: 1. JEDEC-standard MS-026 BHA (LQFP).
The Micron
Micron’s 16Mb SyncBurst SRAMs integrate a 1 Meg x
Asynchronous inputs include the output enable
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
, 3.3V or 2.5V I/O; 2.5V V
(Preliminary Package Data)
®
SyncBurst
100-Pin TQFP
165-Pin FBGA
SRAM family employs high-
1
©2000, Micron Technology, Inc.
DD
ADVANCE
, 2.5V

Related parts for MT58V1MV18D

MT58V1MV18D Summary of contents

Page 1

... FBGA package marking guide. Part Number Example: MT58L1MY18DT-7.5 16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM MT58L1MY18D_2.p65 – Rev 7/00 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM ™ MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V V I/O, Pipelined, Double-Cycle Deselect -6 -7.5 -10 NOTE: 1 ...

Page 2

ADDRESS SA0, SA1, SAs REGISTER MODE ADV# CLK ADSC# ADSP# BYTE “b” WRITE REGISTER BWb# BYTE “a” WRITE REGISTER BWa# BWE# GW# ENABLE CE# REGISTER CE2 CE2# OE# 19 ADDRESS SA0, SA1, SAs REGISTER MODE ADV# CLK ADSC# ADSP# ...

Page 3

GENERAL DESCRIPTION (continued) a burst mode input (MODE) that selects between inter- leaved and linear burst modes. The data-out (Q), en- abled by OE#, is also asynchronous. WRITE cycles can be from one to two bytes wide (x18) or from ...

Page 4

ADV# 83 ADSP# 84 ADSC# 85 ...

Page 5

TQFP PIN DESCRIPTIONS x18 x32/x36 SYMBOL 32-35, 42-50, 32-35, 42-50, 80-82, 99, 81, 82, 99, 100 100 93 93 BWa BWb# – 95 BWc# – 96 BWd BWE GW# 89 ...

Page 6

TQFP PIN DESCRIPTIONS (continued) x18 x32/x36 SYMBOL 84 84 ADSP ADSC MODE (LBO#) (a) 58, 59, (a) 52, 53, 62, 63, 68, 69, 56-59, 62, 63 72 12, (b) 68, 69 13, ...

Page 7

CE# BWb# NC CE2# BWE CE2 NC BWa# CLK GW ...

Page 8

FBGA PIN DESCRIPTIONS x18 x32/x36 SYMBOL 2A, 2B, 3P, 2A, 2B, 3P, 3R, 4P, 4R, 6N, 3R, 4P, 4R, 6N, 8P, 8R, 9P, 9R, 8P, 8R, 9P, 10A, 10B, 10P, 9R, 10A, 10B, 10R, 11A, 11P, ...

Page 9

FBGA PIN DESCRIPTIONS (continued) x18 x32/x36 SYMBOL 9A 9A ADV ADSP ADSC MODE (LB0#) (a) 10J, 10K, (a) 10J, 10K, 10L, 10M, 11D, 10L, 10M, 11J, 11E, 11F, 11G 11K, 11L, 11M (b) 1J, ...

Page 10

FBGA PIN DESCRIPTIONS (continued) x18 x32/x36 SYMBOL 3C, 3D, 3E, 3C, 3D, 3E, V 3F, 3G, 3J, 3F, 3G, 3J, 3K, 3L, 3M, 3K, 3L, 3M, 3N, 9C, 9D, 3N, 9C, 9D, 9E, 9F, 9G, 9E, 9F, 9G, 9J, 9K, ...

Page 11

INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH) FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) X...X00 X...X01 X...X10 X...X11 LINEAR BURST ADDRESS TABLE (MODE = LOW) FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) X...X00 X...X01 X...X10 X...X11 PARTIAL TRUTH TABLE FOR ...

Page 12

TRUTH TABLE (Notes 1-8) OPERATION DESELECT Cycle, Power-Down DESELECT Cycle, Power-Down DESELECT Cycle, Power-Down DESELECT Cycle, Power-Down DESELECT Cycle, Power-Down SNOOZE MODE, Power-Down READ Cycle, Begin Burst READ Cycle, Begin Burst WRITE Cycle, Begin Burst READ Cycle, Begin Burst READ ...

Page 13

V , ABSOLUTE MAXIMUM DD RATINGS* Voltage on V Supply DD Relative to V ................................ -0.5V to +4.6V SS Voltage Supply DD Relative to V ................................ -0.5V to +4. (DQx) .................................... -0. ...

Page 14

V , 2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS DD (0ºC T +70º +3.3V ±0.165V DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output ...

Page 15

TQFP CAPACITANCE DESCRIPTION Control Input Capacitance Input/Output Capacitance (DQ) Address Capacitance Clock Capacitance FBGA CAPACITANCE DESCRIPTION Address/Control Input Capacitance Output Capacitance (Q) Clock Capacitance TQFP THERMAL RESISTANCE DESCRIPTION Thermal Resistance Test conditions follow standard test methods (Junction to Ambient) Thermal ...

Page 16

I OPERATING CONDITIONS AND MAXIMUM LIMITS DD (Note 1, unless otherwise noted)(0ºC T DESCRIPTION CONDITIONS Power Supply Device selected; All inputs V Current Cycle time IH Operating V = MAX; Outputs open DD Power Supply Device selected; ...

Page 17

AC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (Notes 1, 10 unless otherwise noted) (0ºC T DESCRIPTION Clock Clock cycle time Clock frequency Clock HIGH time Clock LOW time Output Times Clock to output valid Clock to output invalid Clock to ...

Page 18

V , 3.3V I/O AC TEST CONDITIONS DD Input pulse levels ................... V .................... V Input rise and fall times ...................................... 1ns Input timing reference levels ....................... V Output reference levels ............................. V Output load .............................. See Figures 1 ...

Page 19

SNOOZE MODE SNOOZE MODE is a low-current, “power-down” mode in which the device is deselected and current is reduced The duration of SNOOZE MODE dictated by the length of time ...

Page 20

KC CLK ADSS t ADSH ADSP# ADSC ADDRESS GW#, BWE#, BWa#-BWd# t CES t CEH CE# (NOTE 2) ADV# OE# (NOTE 3) t KQLZ Q ...

Page 21

KC CLK ADSS t ADSH ADSP# t ADSS ADSC ADDRESS A1 Byte write signals are ignored for first cycle when ADSP# initiates burst. BWE#, BWa#-BWd# GW# t CES t CEH ...

Page 22

KC CLK ADSS t ADSH ADSP# ADSC ADDRESS BWE#, BWa#-BWd# (NOTE 4) t CES t CEH CE# (NOTE 2) ADV# OE High-Z t KQLZ Q ...

Page 23

IEEE 1149.1 SERIAL BOUNDARY SCAN (JTAG) The SRAM incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These ...

Page 24

TEST DATA-OUT (TDO) The TDO output pin is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. (See Figure 5.) The output changes on the falling edge ...

Page 25

TDI, and the LSB is connected to TDO. IDENTIFICATION (ID) REGISTER The ID register is loaded with a vendor-specific, 32- bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. ...

Page 26

BYPASS When the BYPASS instruction is loaded in the in- struction register and the TAP is placed in a Shift-DR state, the bypass register is placed between TDI and TDO. The advantage of the BYPASS instruction is that it shortens ...

Page 27

TAP AC TEST CONDITIONS Input pulse levels ....................................... V Input rise and fall times ......................................... 1ns Input timing reference levels ............................. 1.25V Output reference levels ..................................... 1.25V Test load termination supply voltage ............... 1.25V TAP DC ELECTRICAL CHARACTERISTICS AND OPERATING ...

Page 28

IDENTIFICATION REGISTER DEFINITIONS INSTRUCTION FIELD 512K x 18 REVISION NUMBER xxxx (31:28) DEVICE DEPTH 00111 (27:23) DEVICE WIDTH 00011 (22:18) MICRON DEVICE ID xxxxxx (17:12) MICRON JEDEC ID 00000101100 CODE (11:1) ID Register Presence 1 Indicator (0) SCAN REGISTER SIZES ...

Page 29

FBGA BOUNDARY SCAN ORDER (x18) FBGA BIT# SIGNAL NAME DQa 9 DQa 10 DQa 11 DQa DQa 14 DQa 15 DQa 16 ...

Page 30

FBGA BOUNDARY SCAN ORDER (x32/36) FBGA BIT# SIGNAL NAME NC/DQPa 9 DQa 10 DQa 11 DQa 12 DQa 13 DQa 14 DQa 15 DQa 16 ...

Page 31

Product Family S = SRAM M = SRAM Mechanical sample X = SRAM Engineering sample Product Type B = QDR burst of 2 ™ QDR burst DDR F = SyncBurst , Pipelined, Single-Cycle Deslect ...

Page 32

PIN #1 ID 14.00 ±0.10 +0.20 16.00 -0.05 NOTE: 1. All dimensions in millimeters MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side. 16Mb: 1 Meg x ...

Page 33

TYP Ø -.10 7.50 ±0.05 15.00 ±0.10 7.00 ±0.05 5.00 ±0.05 13.00 ±0.10 NOTE: 1. All dimensions in millimeters MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable ...

Page 34

REVISION HISTORY Changed FBGA capacitance values, Rev. 7/00, ADVANCE ............................................................................... Aug/8/ TYP 2.5 pF from 4 pF; MAX 3.5 pF from TYP 4 pF from 6 pF; MAX 5 pF from 7 pF ...

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