M391B5273DH0 SAMSUNG [Samsung semiconductor], M391B5273DH0 Datasheet - Page 26

• Manufacturer Part Number: M391B5273DH0
• Description: 240pin Unbuffered DIMM based on 2Gb D-die
• Manufacturer: SAMSUNG [Samsung semiconductor]

Unbuffered DIMM
16. Input/Output Capacitance
[ Table 14 ] Input/Output Capacitance
NOTE : This parameter is Component Input/Output Capacitance so that is different from Module level Capacitance.
1. Although the DM, TDQS and TDQS pins have different functions, the loading matches DQ and DQS
2. This parameter is not subject to production test. It is verified by design and characterization.
3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here
4. Absolute value of CCK-CCK
5. Absolute value of CIO(DQS)-CIO(DQS)
6. CI applies to ODT, CS, CKE, A0-A15, BA0-BA2, RAS, CAS, WE.
7. CDI_CTRL applies to ODT, CS and CKE
8. CDI_CTRL=CI(CTRL)-0.5*(CI(CLK)+CI(CLK))
9. CDI_ADD_CMD applies to A0-A15, BA0-BA2, RAS, CAS and WE
10. CDI_ADD_CMD=CI(ADD_CMD) - 0.5*(CI(CLK)+CI(CLK))
11. CDIO=CIO(DQ,DM) - 0.5*(CIO(DQS)+CIO(DQS))
12. Maximum external load capacitance on ZQ pin: 5pF
Input/output capacitance
(DQ, DM, DQS, DQS, TDQS, TDQS)
Input capacitance
(CK and CK)
Input capacitance delta
(CK and CK)
Input capacitance
(All other input-only pins)
Input capacitance delta
(DQS and DQS)
Input capacitance delta
(All control input-only pins)
Input capacitance delta
(all ADD and CMD input-only pins)
Input/output capacitance delta
(DQ, DM, DQS, DQS, TDQS, TDQS)
Input/output capacitance of ZQ pin
The capacitance is measured according to JEP147("PROCEDURE FOR MEASURING INPUT CAPACITANCE USING A VECTOR NETWORK ANALYZER( VNA)") with
V
termination off.
DD
, V
DDQ
, V
Parameter
SS
, V
SSQ
applied and all other pins floating (except the pin under test, CKE, RESET and ODT as necessary). V
CDI_ADD_CMD
CDI_CTRL
Symbol
CDDQS
CDCK
CDIO
CCK
CZQ
CIO
CI
0.75
Min
-0.5
-0.5
-0.5
1.5
0.8
datasheet
DDR3-800
0
0
-
Max
0.15
3.0
1.6
1.5
0.2
0.3
0.5
0.3
3
0.75
DDR3-1066
Min
-0.5
-0.5
-0.5
1.5
0.8
0
0
-
- 26 -
Max
0.15
2.7
1.6
1.5
0.2
0.3
0.5
0.3
3
0.75
DDR3-1333
Min
-0.4
-0.4
-0.5
1.5
0.8
0
0
-
Max
0.15
0.15
2.5
1.4
1.3
0.2
0.4
0.3
3
0.75
DDR3-1600
Min
-0.4
-0.4
-0.5
1.5
0.8
0
0
-
DD
=V
Max
0.15
0.15
2.3
1.4
1.3
0.2
0.4
0.3
3
DDQ
=1.5V, V
0.75
DDR3-1866
Min
-0.4
-0.4
-0.5
1.4
0.8
DDR3 SDRAM
0
0
-
BIAS
Max
0.15
0.15
2.2
1.3
1.2
0.2
0.4
0.3
=V
3
DD
/2 and on-die
Units NOTE
pF
pF
pF
pF
pF
pF
pF
pF
pF
Rev. 1.4
2,3,9,10
2, 3, 12
2,3,7,8
2,3,11
1,2,3
2,3,4
2,3,6
2,3,5
2,3