M391B5273DH0 SAMSUNG [Samsung semiconductor], M391B5273DH0 Datasheet - Page 23
![no-image](/images/no-image-200.jpg)
M391B5273DH0
Manufacturer Part Number
M391B5273DH0
Description
240pin Unbuffered DIMM based on 2Gb D-die
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M391B5273DH0.pdf
(41 pages)
- Current page: 23 of 41
- Download datasheet (2Mb)
Rev. 1.4
datasheet
DDR3 SDRAM
Unbuffered DIMM
NOTE :
1) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B
2) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B; RTT_Wr enable: set MR2 A[10,9] = 10B
3) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12=1B for Fast Exit
4) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature
5) Self-Refresh Temperature Range (SRT): set MR2 A7=0B for normal or 1B for extended temperature range
6) Refer to DRAM supplier data sheet and/or DIMM SPD to determine if optional features or requirements are supported by DDR3 SDRAM device
7) IDD current measure method and detail patterns are described on DDR3 component datasheet
8) VDD and VDDQ are merged on module PCB.
9) DIMM IDD SPEC is measured with Qoff condition
(IDDQ values are not considered)
- 23 -
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