M470T2953CZ0-CCC SAMSUNG [Samsung semiconductor], M470T2953CZ0-CCC Datasheet - Page 2

• Manufacturer Part Number: M470T2953CZ0-CCC
• Description: DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
• Manufacturer: SAMSUNG [Samsung semiconductor]

256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 Unbuffered SODIMM Ordering Information
Note: “Z” of Part number(11th digit) stand for Lead-free products.
Note: “3” of Part number(12th digit) stand for Dummy Pad PCB products.
Features
Address Configuration
M470T3354CZ3-C(L)E7/E6/D5/CC
M470T3354CZ0-C(L)E7/E6/D5/CC
M470T6554CZ3-C(L)E7/E6/D5/CC
M470T6554CZ0-C(L)E7/E6/D5/CC
M470T2953CZ3-C(L)E7/E6/D5/CC
M470T2953CZ0-C(L)E7/E6/D5/CC
Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.
• Performance range
• JEDEC standard 1.8V ± 0.1V Power Supply
• V
• 200 MHz f
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination with selectable values(50/75/150 ohms or disable)
• PASR(Partial Array Self Refresh)
• Average Refresh Period 7.8us at lower than a T
• Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16
• All of Lead-free products are compliant for RoHS
-
CL-tRCD-tRP
Speed@CL3
Speed@CL4
Speed@CL5
DDQ
support High Temperature Self-Refresh rate enable feature
32Mx16(512Mb) based Module
64Mx8(512Mb) based Module
Part Number
= 1.8V ± 0.1V
Organization
CK
for 400Mb/sec/pin, 267MHz f
E7 (DDR2-800)
5-5-5
400
533
800
Density
256MB
256MB
512MB
512MB
1GB
1GB
E6 (DDR2-667)
Row Address
CK
A0-A13
A0-A12
5-5-5
400
533
667
for 533Mb/sec/pin, 333MHz f
Organization
CASE
128Mx64
128Mx64
32Mx64
32Mx64
64Mx64
64Mx64
85°C, 3.9us at 85°C < T
D5 (DDR2-533)
Column Address
4-4-4
400
533
533
Component Composition
A0-A9
A0-A9
32Mx16(K4T51163QC)*4
32Mx16(K4T51163QC)*4
32Mx16(K4T51163QC)*8
32Mx16(K4T51163QC)*8
64Mx8(K4T51083QC)*16
64Mx8(K4T51083QC)*16
CK
CASE
for 667Mb/sec/pin, 400MHz f
CC (DDR2-400)
< 95 °C
3-3-3
400
400
-
Bank Address
BA0-BA1
BA0-BA1
Mbps
Mbps
Mbps
Unit
CK
Number of Rank
Rev. 1.2 Aug. 2005
DDR2 SDRAM
1
1
2
2
2
2
CK
for 800Mb/sec/pin
Auto Precharge
A10
A10
Height
30mm
30mm
30mm
30mm
30mm
30mm