M470T2953CZ0-CCC SAMSUNG [Samsung semiconductor], M470T2953CZ0-CCC Datasheet - Page 11
![no-image](/images/no-image-200.jpg)
M470T2953CZ0-CCC
Manufacturer Part Number
M470T2953CZ0-CCC
Description
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M470T2953CZ0-CCC.pdf
(18 pages)
Operating Current Table(1-1)
M470T6554CZ3/M470T6554CZ0 : 64Mx64 512MB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M470T3354CZ3/M470T3354CZ0 : 32Mx64 256MB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
256MB, 512MB, 1GB Unbuffered SODIMMs
IDD3P-S
IDD3P-F
IDD3P-F
IDD3P-S
Symbol
Symbol
IDD4W
IDD2Q
IDD2P
IDD2N
IDD3N
IDD4R
IDD4W
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2P
IDD0
IDD1
IDD5
IDD6
IDD7
IDD0
IDD1
IDD5
IDD6
IDD7
CE7
CE7
800@CL=5
800@CL=5
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
LE7
LE7
1,360
1,200
CE6
560
620
280
320
240
380
860
880
760
CE6
(T
400
460
140
160
120
220
700
720
600
64
96
64
32
48
32
A
667@CL=5
667@CL=5
=0
o
C, VDD= 1.9V)
1,220
1,080
LE6
480
540
240
280
200
320
800
820
680
LE6
340
400
120
140
100
180
660
680
540
40
64
32
20
32
16
1,340
1,200
CD5
520
580
240
280
240
340
760
780
700
CD5
380
440
120
140
120
200
620
640
560
64
96
64
32
48
32
533@CL=4
533@CL=4
1,200
1,080
LD5
460
520
200
240
200
280
700
720
620
LD5
340
400
100
120
100
160
580
600
500
36
64
32
18
32
16
1,340
1,200
CCC
CCC
520
580
240
280
240
340
680
700
700
380
440
120
140
120
200
540
560
560
64
96
64
32
48
32
400@CL=3
400@CL=3
1,200
1,080
LCC
LCC
460
520
200
240
200
280
620
640
620
340
400
100
120
100
160
500
520
500
36
64
32
18
32
16
Rev. 1.2 Aug. 2005
DDR2 SDRAM
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
Notes