M391B5273CH0 SAMSUNG [Samsung semiconductor], M391B5273CH0 Datasheet - Page 27

• Manufacturer Part Number: M391B5273CH0
• Description: 240pin Unbuffered DIMM based on 2Gb C-die
• Manufacturer: SAMSUNG [Samsung semiconductor]

Unbuffered DIMM
17. Electrical Characteristics and AC timing
17.1 Refresh Parameters by Device Density
NOTE :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or requirements referred to in
17.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
17.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
[ Table 15 ] DDR3-800 Speed Bins
All Bank Refresh to active/refresh cmd time
Average periodic refresh interval
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6 / CWL = 5
Supported CL Settings
Supported CWL Settings
this material.
Bin (CL - tRCD - tRP)
(0 °C<T
DDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
Parameter
Speed
tRCD
tRRD
tFAW
tRAS
CASE
tRP
tRC
CL
Parameter
Parameter
≤95 °C, V
CL-nRCD-nRP
Speed
DDQ
= 1.5V ± 0.075V; V
DDR3-800
6-6-6
37.5
52.5
min
15
15
10
40
6
tREFI
tCK(AVG)
Symbol
tRCD
tRAS
datasheet
85 °C < T
tRP
tRC
tAA
0 °C ≤ T
DD
Symbol
DDR3-1066
tRFC
= 1.5V ± 0.075V)
13.13
13.13
50.63
7-7-7
37.5
37.5
min
7.5
7
CASE
CASE
≤ 85°C
≤ 95°C
- 27 -
52.5
37.5
min
2.5
15
15
15
DDR3-1333
1Gb
9-9-9
110
7.8
3.9
13.5
13.5
49.5
min
6.0
36
30
9
DDR3-800
6 - 6 - 6
6
5
2Gb
160
7.8
3.9
9*tREFI
DDR3-1600
max
3.3
20
11-11-11
-
-
-
13.75
13.75
48.75
min
6.0
11
35
30
4Gb
300
7.8
3.9
DDR3 SDRAM
8Gb
350
7.8
3.9
Units
Units
nCK
nCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
ns
µs
µs
Rev. 1.21
NOTE
NOTE
1,2,3
NOTE
1