M391B5273CH0 SAMSUNG [Samsung semiconductor], M391B5273CH0 Datasheet - Page 17

• Manufacturer Part Number: M391B5273CH0
• Description: 240pin Unbuffered DIMM based on 2Gb C-die
• Manufacturer: SAMSUNG [Samsung semiconductor]

Unbuffered DIMM
12.3 AC and DC Logic Input Levels for Differential Signals
12.3.1 Differential Signals Definition
12.3.2 Differential Swing Requirement for Clock (CK - CK) and Strobe (DQS - DQS)
NOTE :
1. Used to define a differential signal slew-rate.
2. for CK - CK use V
3. These values are not defined, however they single-ended signals CK, CK, DQS, DQS, DQSL need to be within the respective limits (V
[ Table 4 ] Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS.
then the reduced level applies also here.
ended signals as well as the limitations for overshoot and undershoot. Refer to "overshoot and Undersheet Specification"
V
V
Symbol
IHdiff
ILdiff
V
V
IHdiff
ILdiff
(AC)
(AC)
Slew Rate [V/ns]
IH
/V
> 4.0
< 1.0
IL
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
(AC) of ADD/CMD and V
differential input high ac
differential input low ac
differential input high
differential input low
Parameter
Figure 3. Definition of differential ac-swing and "time above ac level" tDVAC
V
V
IL
IH
.DIFF.AC.MAX
.DIFF.AC.MIN
V
V
REFCA
IL
IH
.DIFF.MAX
.DIFF.MIN
; for DQS - DQS use V
tDVAC [ps] @ |V
0.0
min
75
57
50
38
34
29
22
13
datasheet
0
0
2 x (V
NOTE 3
NOTE 3
IH
+0.2
(AC) - V
min
IH
half cycle
IH/Ldiff
/V
DDR3-800/1066/1333/1600
IL
(AC) of DQs and V
- 17 -
tDVAC
REF
(AC)| = 350mV
)
max
-
-
-
-
-
-
-
-
-
-
REFDQ
2 x (V
; if a reduced ac-high or ac-low level is used for a signal group,
NOTE 3
NOTE 3
IL
max
(AC) - V
-0.2
tDVAC
tDVAC [ps] @ |V
REF
min
175
170
167
163
162
161
159
155
150
150
)
time
IH
DDR3 SDRAM
(DC) max, V
IH/Ldiff
unit
V
V
V
V
(AC)| = 300mV
IL
(DC)min) for single-
max
-
-
-
-
-
-
-
-
-
-
Rev. 1.21
NOTE
1
1
2
2