M391B1G73BH0 SAMSUNG [Samsung semiconductor], M391B1G73BH0 Datasheet - Page 28

• Manufacturer Part Number: M391B1G73BH0
• Description: 240pin Unbuffered DIMM based on 4Gb B-die
• Manufacturer: SAMSUNG [Samsung semiconductor]

Unbuffered DIMM
[ Table 18 ] DDR3-1600 Speed Bins
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CL = 11
Supported CL Settings
Supported CWL Settings
Parameter
CL-nRCD-nRP
Speed
CWL = 5,6,7
CWL = 7, 8
CWL = 5,6
CWL = 5,6
CWL = 5
CWL = 6
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 7
CWL = 8
CWL = 7
CWL = 8
CWL = 8
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
Symbol
tRCD
tRAS
tAA
tRP
tRC
datasheet
- 28 -
(13.125)
(13.125)
(13.125)
(48.125)
13.75
13.75
13.75
48.75
1.875
1.875
1.25
min
2.5
1.5
1.5
35
9
9
9
9
6,7,8,9,10,11
DDR3-1600
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
11-11-11
5,6,7,8
9*tREFI
<1.875
<1.875
max
<2.5
<2.5
<1.5
3.3
20
-
-
-
DDR3 SDRAM
Units
nCK
nCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2,3,4,7
1,2,3,4,7
1,2,3,4,7
1,2,3,4,7
1,2,3,4,7
1,2,3,7
1,2,3,7
1,2,3,4
1,2,3,4
1,2,3,7
1,2,3,4
1,2,3,9
NOTE
Rev. 1.3
4
4
4
4
4
4
4