M391B1G73BH0 SAMSUNG [Samsung semiconductor], M391B1G73BH0 Datasheet - Page 18
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M391B1G73BH0
Manufacturer Part Number
M391B1G73BH0
Description
240pin Unbuffered DIMM based on 4Gb B-die
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M391B1G73BH0.pdf
(40 pages)
Unbuffered DIMM
12.3.4 Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross point voltage of differential input
signals (CK, CK and DQS, DQS) must meet the requirements in below table. The differential input cross point voltage V
cross point of true and complement signal to the mid level between of V
[ Table 6 ] Cross point voltage for differential input signals (CK, DQS)
NOTE :
1. Extended range for V
2. The relation between V
12.4 Slew Rate Definition for Single Ended Input Signals
See "Address / Command Setup, Hold and Derating" for single-ended slew rate definitions for address and command signals.
See "Data Setup, Hold and Slew Rate Derating" for single-ended slew rate definitions for data signals.
12.5 Slew rate definition for Differential Input Signals
Input slew rate for differential signals (CK, CK and DQS, DQS) are defined and measured as shown in below.
[ Table 7 ] Differential input slew rate definition
NOTE : The differential signal (i.e. CK - CK and DQS - DQS) must be linear between these thresholds
Differential input slew rate for rising edge (CK-CK and DQS-DQS)
Differential input slew rate for falling edge (CK-CK and DQS-DQS)
(V
V
Symbol
±250 mV, and the differential slew rate of CK-CK is larger than 3 V/ ns.
SEH
DD
V
V
IX
IX
/2) + V
- ((V
DD
IX
/2) + V
Differential Input Cross Point Voltage relative to V
Differential Input Cross Point Voltage relative to V
(Min) - V
IX
(Max)) ≥ 25mV
IX
SEL
IX
is only allowed for clock and if single-ended clock input signals CK and CK are monotonic, have a single-ended swing V
Min/Max and V
≥ 25mV
Description
SEL
Figure 6. Differential input slew rate definition for DQS, DQS and CK, CK
/V
Parameter
SEH
should satisfy following.
delta TFdiff
V
IX
datasheet
DD
DD
/2 for CK,CK
/2 for DQS,DQS
Figure 5. V
V
DD
IX
and V
V
V
- 18 -
ILdiffmax
From
IHdiffmin
IX
Definition
SS
delta TRdiff
Measured
.
V
IX
DDR3-800/1066/1333/1600/1866
V
V
IHdiffmin
ILdiffmax
-150
-175
-150
Min
To
V
0
V
IHdiffmin
ILdiffmax
V
CK, DQS
V
CK, DQS
V
DD
DD
SS
/2
V
V
Max
150
175
150
IHdiffmin
IHdiffmin
IX
Delta TRdiff
Delta TFdiff
Defined by
DDR3 SDRAM
is measured from the actual
- V
- V
SEL
ILdiffmax
ILdiffmax
/ V
SEH
Unit
mV
mV
mV
of at least V
Rev. 1.3
NOTE
2
1
2
DD
/2