M393T2950BG0-CD5/CC SAMSUNG [Samsung semiconductor], M393T2950BG0-CD5/CC Datasheet - Page 13
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M393T2950BG0-CD5/CC
Manufacturer Part Number
M393T2950BG0-CD5/CC
Description
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M393T2950BG0-CD5CC.pdf
(21 pages)
Operating Current Table(1-2)
M393T2950BG(Z)3 / M393T2950BG(Z)0 : 1GB(128Mx4 *18) Module
* IDD6 = DRAM current + standby current of PLL and Register.
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M393T5750BS(Y)3 / M393T5750BS(Y)0 : 2GB(128Mx4 *36) Module
* IDD6 = DRAM current + standby current of PLL and Register.
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
512MB, 1GB, 2GB Registered DIMMs
IDD6*
IDD6*
IDD3P-S
IDD3P-S
IDD3P-F
IDD3P-F
Symbol
Symbol
IDD4W
IDD4W
IDD2P
IDD2Q
IDD2N
IDD3N
IDD4R
IDD5B
IDD2P
IDD2Q
IDD2N
IDD3N
IDD4R
IDD5B
IDD0
IDD1
IDD7
IDD0
IDD1
IDD7
Normal
Normal
(T
A
=0
o
C, VDD= 1.9V)
(DDR2-533@CL=4)
(DDR2-533@CL=4)
2,420
2,640
1,110
1,090
1,190
1,840
3,820
3,590
4,150
5,900
3,250
3,520
1,238
1,880
1,850
2,050
1,030
2,620
4,710
4,330
4,990
7,140
784
600
198
D5
D5
99
(DDR2-400@CL=3)
(DDR2-400@CL=3)
2,250
2,400
1,040
1,060
1,130
1,730
2,900
3,000
3,880
5,570
3,010
3,220
1,138
1,770
1,810
1,950
2,500
3,690
3,700
4,660
6,600
724
570
980
198
CC
CC
99
Rev. 1.3 Aug. 2005
DDR2 SDRAM
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
Notes