R1WV6416RBG-5SI RENESAS [Renesas Technology Corp], R1WV6416RBG-5SI Datasheet - Page 5

• Manufacturer Part Number: R1WV6416RBG-5SI
• Description: 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
• Manufacturer: RENESAS [Renesas Technology Corp]

R1WV6416R Series
Operation Table
Note1. H: V
Absolute Maximum Ratings
Power supply voltage relative to Vss
Terminal voltage on any pin relative to Vss
Power dissipation
Operation temperature
Storage temperature range
Storage temperature range under bias
REJ03C0368-0001, Rev.0.01, 2008.03.24
Page 5 of 16
Note 1. –2.0V in case of AC (Pulse width ≤30ns)
2. Maximum voltage is +4.6V.
3. Ambient temperature range depends on R/I-version. Please see table on page 1.
2. BYTE# pin is supported for 48-pin TSOP (I) and 52-pin µTSOP (II) packages.
3. When apply BYTE# =“L”, please assign LB#=UB#=“L”.
CS1#
H
X
X
L
L
L
L
L
L
L
L
L
L
CS2
IH
H
H
H
H
H
H
H
H
H
H
X
L
X
L:V
Parameter
IL
BYTE#
X
X
H
H
H
H
H
H
H
H
L
L
L
X: V
IH
or V
LB#
X
X
H
H
H
L
L
L
L
L
L
L
L
IL
UB#
H
H
H
X
X
L
L
L
L
L
L
L
L
WE#
X
X
X
H
H
H
H
H
H
L
L
L
L
Symbol
Tbias
Topr
Tstg
Vcc
V
P
T
T
OE#
*3
H
H
*3
X
X
X
X
L
X
L
X
L
X
L
DQ0~7
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
R ver.
R ver.
Dout
Dout
Dout
I ver.
I ver.
Din
Din
Din
-0.5
DQ8~14
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
Din
Din
-0.5 to +4.6
*1
-65 to 150
to Vcc+0.3
Value
0.7
-40 to +85
-40 to +85
0 to +70
0 to +70
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
DQ15
Dout
Dout
A-1
A-1
A-1
Din
Din
*2
Preliminary
Write in upper byte
Read in upper byte
Read in lower byte
Write in lower byte
Output disable
Output disable
Word write
Word read
Operation
Byte write
Byte read
Stand-by
Stand-by
Stand-by
unit
°C
°C
°C
°C
°C
W
V
V