K4S561632C-L1H SAMSUNG [Samsung semiconductor], K4S561632C-L1H Datasheet - Page 5

• Manufacturer Part Number: K4S561632C-L1H
• Description: 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

ABSOLUTE MAXIMUM RATINGS
K4S561632C
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. -75/7C only specify a maximum value of 3.5pF
2. -75/7C only specify a maximum value of 3.8pF
3. -75/7C only specify a maximum value of 6.0pF
1. V
2. V
3. Any input 0V
4. The VDD condition of K4S561632C-60 is 3.135V~3.6V.
Parameter
15
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
Parameter
(max) = 5.6V AC. The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ
V
.
Symbol
A
DD
= 23 C, f = 1MHz, V
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
Symbol
V
C
C
C
V
C
Symbol
DD
ADD
OUT
CLK
IN
Min
-0.3
-10
3.0
2.0
2.4
IN
T
, V
I
-
, V
P
STG
OS
D
REF
OUT
DDQ
SS
= 0V, T
=1.4V
3ns.
3ns.
A
Min
Typ
200 mV)
2.5
2.5
2.5
4.0
3.3
3.0
= 0 to 70 C)
0
-
-
-
V
-55 ~ +150
DD
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
Max
-
4.0
5.0
5.0
6.5
Value
+0.3
50
1
Rev. 0.4 Sept. 2001
Unit
uA
V
V
V
V
V
Unit
CMOS SDRAM
pF
pF
pF
pF
I
Unit
I
OH
mA
OL
W
V
V
C
Note
= -2mA
Note
= 2mA
4
1
2
3
1
2
2
3