K4S643232E-TE50 SAMSUNG [Samsung semiconductor], K4S643232E-TE50 Datasheet - Page 6

• Manufacturer Part Number: K4S643232E-TE50
• Description: 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
• Manufacturer: SAMSUNG [Samsung semiconductor]

Notes :
K4S643232E-TE/N
DC OPERATING CONDITIONS
•Recommended operating conditions (Voltage referenced to V
CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
Note :
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. The V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
31
IH
IL
Parameter
(min) = -2.0V AC. The undershoot voltage duration is
DD
(max) = 5.6V AC.The overshoot voltage duration is
DD
supply relative to Vss
condition of K4S643232E-60 is 3.135V ~ 3.6V
Pin
(V
V
DD
IN
= 3.3V, T
V
DDQ
,
A
V
Symbol
= 23 C, f = 1MHz, V
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
Symbol
V
Symbol
DD
C
C
C
IN
C
T
ADD
OUT
CLK
, V
I
, V
P
STG
OS
IN
Min
-0.3
3.0
2.0
2.4
-10
D
-
OUT
REF
DDQ
SS
= 0V, T
= 1.4V
- 6 -
3ns.
3ns.
A
= -25
200 mV)
Typ
3.3
3.0
0
-
-
-
Min
o
C to +85
-
-
-
-
-55 ~ +150
V
-1.0 ~ 4.6
-1.0 ~ 4.6
o
C)
DDQ
Value
Max
3.6
0.8
0.4
10
50
-
1
+0.3
Max
4.5
4.5
6.5
4
Unit
CMOS SDRAM
Rev. 1.4 (Dec. 2001)
uA
V
V
V
V
V
I
Unit
mA
OH
I
W
OL
Unit
V
V
C
pF
pF
pF
pF
Note
= -2mA
= 2mA
1
2
3