K4S643232E-TE50 SAMSUNG [Samsung semiconductor], K4S643232E-TE50 Datasheet - Page 12

• Manufacturer Part Number: K4S643232E-TE50
• Description: 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S643232E-TE/N
BURST SEQUENCE (BURST LENGTH = 4)
BURST SEQUENCE (BURST LENGTH = 8)
A
0
0
0
0
1
1
1
1
2
A
0
0
1
1
Initial Address
Initial Address
1
A
0
0
1
1
0
0
1
1
1
A
0
1
0
1
0
A
0
1
0
1
0
1
0
1
0
0
1
2
3
4
5
6
7
0
1
2
3
1
2
3
4
5
6
7
0
2
3
4
5
6
7
0
1
1
2
3
0
Sequential
Sequential
3
4
5
6
7
0
1
2
4
5
6
7
0
1
2
3
2
3
0
1
5
6
7
0
1
2
3
4
- 12
6
7
0
1
2
3
4
5
3
0
1
2
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
0
1
2
3
1
0
3
2
5
4
7
6
2
3
0
1
6
7
4
5
1
0
3
2
Interleave
Interleave
3
2
1
0
7
6
5
4
CMOS SDRAM
Rev. 1.4 (Dec. 2001)
4
5
6
7
0
1
2
3
2
3
0
1
5
4
7
6
1
0
3
2
6
7
4
5
2
3
0
1
3
2
1
0
7
6
5
4
3
2
1
0