K4H510838D SAMSUNG [Samsung semiconductor], K4H510838D Datasheet - Page 5

• Manufacturer Part Number: K4H510838D
• Description: DDR SDRAM Product Guide
• Manufacturer: SAMSUNG [Samsung semiconductor]

General Information
D. DDR SDRAM Module Ordering Information
Memory Module
DIMM Configuration
Data bits
Feature
Depth
Refresh, # of Banks in Comp. & Interface
1. Memory Module : M
2. DIMM Configuration
3. Data Bits
4. Feature
5. Depth
6. Refresh, # of Banks in comp. & Interface
68 : x64 184pin Unbuffered DIMM
81 : x72 184pin ECC unbuffered DIMM
83 : x72 184pin Registered DIMM
12 : x72 184pin Low Profile Registered DIMM
70 : x64 200pin Unbuffered SODIMM
63 : x64 172pin Micro DIMM
16 : 16M
32 : 32M
64 : 64M
28 : 128M
56 : 256M
51 : 512M
1 :
2 :
L : DDR SDRAM (2.5V VDD)
3 : DIMM
4 : SODIMM
4K/ 64ms Ref., 4Banks & SSTL-2
8K/ 64ms Ref., 4Banks & SSTL-2
M X X X L X X X X X X X - X X X
1
2
17 : 16M (for 128Mb/512Mb)
33 : 32M (for 128Mb/512Mb)
65 : 64M (for 128Mb/512Mb)
29 : 128M (for 128Mb/512Mb)
57 : 256M (for 512Mb)
3
4
5
6
7
7. Composition Component
9. Package
10. PCB Revision & Type
11. Temp & Power
12. Speed
8. Component Revision
8
0 : x 4
3 : x 8
4 : x16
8 : x 4 Stack
9 : x 8 Stack
M
B
D
F
H
T
N
G
0
2
S : Reduced layer PCB
C
L
CC
B3
A2
B0
(Note 1 : All of Lead-free product are in compliance with RoHS)
9
:
:
:
:
:
:
:
:
: Mother PCB
: 2nd Rev.
1st Gen.
3rd Gen.
5th Gen.
7th Gen.
9th Gen.
: Commercial Temp.( 0°C ~ 70°C) & Normal Power
: Commercial Temp.( 0°C ~ 70°C) & Low Power
: DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)
: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)
: DDR400 (200MHz @ CL=3,
: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)
TSOP II (400mil)
sTSOP
FBGA
10
A
C
E
G
J
11
:
:
:
:
:
2nd Gen.
4th Gen.
6th Gen.
8th Gen
11th Gen.
12
1 : 1st Rev.
3 : 3rd Rev.
Composition Component
U
V
Z
: TSOP II
: sTSOP II
: FBGA
Component Revision
PCB revision & Type
December 2007
DDR SDRAM
*1
tRCD=3, tRP=3)
*1
(Lead-Free)
*1
(Lead-Free)
(Lead-Free)
Package
Speed
Power