K4H510838D SAMSUNG [Samsung semiconductor], K4H510838D Datasheet - Page 2
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K4H510838D
Manufacturer Part Number
K4H510838D
Description
DDR SDRAM Product Guide
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4H510838D.pdf
(10 pages)
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General Information
A. DDR SDRAM Component Ordering Information
SAMSUNG Memory
DRAM
Product
Density & Refresh
Organization
1. SAMSUNG Memory : K
2. DRAM : 4
3. Product
4. Density & Refresh
5. Organization
6. Bank
7. Interface ( V
04 : x 4
06 : x 4 Stack
07 : x 8 Stack
08 : x 8
16 : x16
8 : SSTL-2 (2.5V, 2.5V)
28 : 128Mb, 4K/64ms
56 : 256Mb, 8K/64ms
51 : 512Mb, 8K/64ms
1G:
2G:
3 : 4 Banks
H : DDR SDRAM
1Gb,
2Gb,
DD
8K/64ms
8K/64ms
, V
K 4 H X X X X X X X - X X X X
1
DDQ
2
)
3
4
5
6
8. Revision
9. Package Type
10. Temperature & Power
11. Speed
Note 1: All of Lead-free or Halogen-free product are in
T
N
G
L
H
F
6
CC
B3
A2
B0
M
A
B
C
D
E
F
G
H
Note 1: "B3" has compatibility with "A2" and "B0"
C
L
I
P
: TSOP II
: sTSOP II
: FBGA
: TSOP II (Lead-free & Halogen-free)
: FBGA (Lead-free & Halogen-free)
: FBGA for 64Mb DDR (Lead-free & Halogen-free)
: sTSOP II (Lead-free & Halogen-free)
7
: 1st Gen.
: 2nd Gen.
: 3rd Gen.
: 4th Gen.
: 5th Gen.
: 6th Gen.
: 7th Gen.
: 8th Gen.
: 9th Gen.
: DDR400 (200MHz @ CL=3,
: DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)
: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)
: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)
: Commercial Temp.( 0°C ~ 70°C) & Normal Power
: Commercial Temp.( 0°C ~ 70°C) & Low Power
: Industrial Temp.( -40°C ~ 85°C) & Normal Power
: Industrial Temp.( -40°C ~ 85°C) & Low Power
compliance with RoHS
8
9
J
N
U
V
Z
10
: 11st Gen.
: 14th Gen.
: TSOP II (Lead-free)
: sTSOP II (Lead-free)
: FBGA (Lead-free)
11
Temperature & Power
Interface (V
December 2007
tRCD=3, tRP=3)
DDR SDRAM
*1
*1
*1
Package Type
*1
*1
DD
*1
Revision
, V
Speed
Bank
DDQ
*1
*1
)