K4S641632D-TC/L1H SAMSUNG [Samsung semiconductor], K4S641632D-TC/L1H Datasheet - Page 6

• Manufacturer Part Number: K4S641632D-TC/L1H
• Description: 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: SAMSUNG [Samsung semiconductor]

Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
K4S641632D
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632D-TC**
4. K4S641632D-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS CKE & CLK
PS CKE & CLK
P
N
P
N
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
t
CKE
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
O
CCD
= 0 mA
= 0 mA
t
= 2CLKs
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
= 10ns
= 10ns
V
V
V
V
IH
IH
A
CC
CC
IL
IL
(min), t
(min), t
= 0 to 70 C)
IH
(max), t
(max), t
/V
=
=
IL
=V
CC
CC
CC
CC
DDQ
= 10ns
= 10ns
=
=
/V
SSQ)
C
L
- 55 -60 - 70 - 75 - 80 -1H -1L
150 140 115 110 110 100 100 mA
170 160 140 135 130 110 110 mA
170 160 140 135 130 125 125 mA
Version
400
15
25
15
Rev. 0.3 June 2000
1
1
6
3
3
1
CMOS SDRAM
Unit Note
mA
mA
mA
mA
mA
uA
1
1
2
3
4