K4S641632D-TC/L1H SAMSUNG [Samsung semiconductor], K4S641632D-TC/L1H Datasheet - Page 3

• Manufacturer Part Number: K4S641632D-TC/L1H
• Description: 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: SAMSUNG [Samsung semiconductor]

1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
• All inputs are sampled at the positive going edge of the system
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
FUNCTIONAL BLOCK DIAGRAM
K4S641632D
clock
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
ADD
CLK
LCKE
*
CLK
Samsung Electronics reserves the right to change products or specification without notice.
LRAS
CKE
Bank Select
LCBR
CS
LWE
RAS
Timing Register
LCAS
CAS
Latency & Burst Length
GENERAL DESCRIPTION
rate Dynamic RAM organized as 4 x 1,048,576 words by 16
bits, fabricated with SAMSUNG s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programma-
ble burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
ORDERING INFORMATION
Programming Register
WE
Data Input Register
K4S641632D-TC/L55
K4S641632D-TC/L60
K4S641632D-TC/L70
K4S641632D-TC/L75
K4S641632D-TC/L80
K4S641632D-TC/L1H
K4S641632D-TC/L1L
The K4S641632D is 67,108,864 bits synchronous high data
Column Decoder
1M x 16
1M x 16
1M x 16
1M x 16
L(U)DQM
Part No.
LWCBR
183MHz(CL=3)
166MHz(CL=3)
143MHz(CL=3)
133MHz(CL=3)
125MHz(CL=3)
100MHz(CL=2)
100MHz(CL=3)
Max Freq.
Rev. 0.3 June 2000
CMOS SDRAM
LDQM
Interface Package
LVTTL
LWE
LDQM
DQi
TSOP(II)
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