K4H510638E-TC/LA2 SAMSUNG [Samsung semiconductor], K4H510638E-TC/LA2 Datasheet - Page 20
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K4H510638E-TC/LA2
Manufacturer Part Number
K4H510638E-TC/LA2
Description
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4H510638E-TCLA2.pdf
(22 pages)
DDR SDRAM stacked 512Mb E-die (x4/x8)
Voltage
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
(V)
Typical
12.2
18.1
24.1
29.8
34.6
39.4
43.7
47.5
51.3
54.1
56.2
57.9
59.3
60.1
60.5
61.0
61.5
62.0
62.5
62.9
63.3
63.8
64.1
64.6
64.8
65.0
Low
6.0
Pulldown Current (mA)
Typical
100.9
101.9
102.8
103.8
104.6
105.4
High
13.5
20.1
26.6
33.0
39.1
44.2
49.8
55.2
60.3
65.2
69.9
74.2
78.4
82.3
85.9
89.1
92.2
95.3
97.2
99.1
6.8
Table 8. Full Strength Driver Characteristics
Minimum
13.8
18.4
23.0
27.7
32.2
36.8
39.6
42.6
44.8
46.2
47.1
47.4
47.7
48.0
49.4
49.6
49.8
49.9
50.0
50.2
50.4
50.5
48.4
48.9
49.1
4.6
9.2
Maximum
103.8
108.4
112.1
115.9
119.6
123.3
126.5
129.5
132.4
135.0
137.3
139.2
140.8
18.2
26.0
33.9
41.8
49.4
56.8
63.2
69.9
76.3
82.5
88.3
93.8
99.1
9.6
Typical
-12.2
-18.1
-24.0
-29.8
-34.3
-38.1
-41.1
-41.8
-46.0
-47.8
-49.2
-50.0
-50.5
-50.7
-51.0
-51.1
-51.3
-51.5
-51.6
-51.8
-52.0
-52.2
-52.3
-52.5
-52.7
-52.8
Low
-6.1
Typical
-101.3
-107.1
-124.0
-129.3
-134.6
-139.9
-145.2
-150.5
-155.3
-160.1
pullup Current (mA)
-112.4
-118.7
-14.5
-21.2
-27.7
-34.1
-40.5
-46.9
-53.1
-59.4
-65.5
-71.6
-95.5
-77.6
-83.6
-89.7
High
-7.6
Rev. 1.0 July. 2003
Minimum
-13.8
-18.4
-23.0
-27.7
-32.2
-36.0
-38.2
-38.7
-39.0
-39.2
-39.4
-39.6
-39.9
-40.1
-40.2
-40.3
-40.4
-40.5
-40.6
-40.7
-40.8
-40.9
-41.0
-41.1
-41.2
DDR SDRAM
-4.6
-9.2
Maximum
-100.6
-108.1
-123.0
-130.4
-136.7
-144.2
-150.5
-156.9
-163.2
-169.6
-176.0
-181.3
-187.6
-192.9
-198.2
-115.5
-10.0
-20.0
-29.8
-38.8
-46.8
-54.4
-61.8
-69.5
-77.3
-85.2
-93.0