K4H510638E-TC/LA2 SAMSUNG [Samsung semiconductor], K4H510638E-TC/LA2 Datasheet - Page 13

• Manufacturer Part Number: K4H510638E-TC/LA2
• Description: Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
• Manufacturer: SAMSUNG [Samsung semiconductor]

DDR SDRAM stacked 512Mb E-die (x4/x8)
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Parameter
Area = 2.4V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
Rev. 1.0 July. 2003
Specification
DDR200/266
DDR SDRAM
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V