AM49DL640BG25IS SPANSION [SPANSION], AM49DL640BG25IS Datasheet - Page 52
AM49DL640BG25IS
Manufacturer Part Number
AM49DL640BG25IS
Description
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Manufacturer
SPANSION [SPANSION]
Datasheet
1.AM49DL640BG25IS.pdf
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FLASH AC CHARACTERISTICS
March 8, 2002
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SADD = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
4. Waveforms are for the word mode.
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings
Addresses
RESET#
RY/BY#
WE#
CE#f
Data
OE#
t
RH
555 for program
2AA for erase
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
P R E L I M I N A R Y
t
t
t
DS
CP
PA for program
SADD for sector erase
555 for chip erase
CPH
t
AS
t
DH
Am49DL640BG
t
AH
OUT
PD for program
30 for sector erase
10 for chip erase
is the data written to the device.
t
BUSY
t
WHWH1 or 2
Data# Polling
DQ7#
PA
D
OUT
51
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