AM49DL6408H55FS SPANSION [SPANSION], AM49DL6408H55FS Datasheet - Page 37
AM49DL6408H55FS
Manufacturer Part Number
AM49DL6408H55FS
Description
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (512 K x 16-Bit)
Manufacturer
SPANSION [SPANSION]
Datasheet
1.AM49DL6408H55FS.pdf
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PSEUDO SRAM DC AND
OPERATING CHARACTERISTICS
Notes:
1. T
2. Overshoot: V
3. Undershoot: –1.0V if pulse width
4. Overshoot and undershoot are sampled, not 100% tested.
5. Stable power supply required 200 µs before device operation.
March 12, 2004
Parameter
Symbol
I
I
CC1
CC2
V
V
I
I
V
A
I
V
I
SB1
SB2
I
LO
SB
OH
= –40
LI
OL
IH
IL
s
s
°
Input Leakage Current
Output Leakage Current
Average Operating Current
Average Operating Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Standby Current (TTL)
Standby Current (CMOS)
Standby Current (CMOS)
to 85
CC
+1.0V if pulse width
°
C, otherwise specified.
Parameter Description
≤
A D V A N C E
20 ns.
≤
20 ns.
V
CE1#s = V
V
Cycle time = 1 µs, 100% duty,
I
CE2 ≥ V
V
Cycle time = Min., I
100% duty, CE1#s = V
V
I
I
CE1#s = V
inputs = V
CE1#s=V
Other inputs = V
t
CE1#s=V
Other inputs = V
t
IO
OL
OH
A
A
IN
IH
IN
IH
= 85°C, V
= 85°C, V
Am49DL6408H
= 0 mA, CE1#s ≤ 0.2 V,
, V
= 2.0 mA
= –1.0 mA
= V
or WE# = V
≥ V
IN
I N F O R M A T I O N
SS
CC
= V
CC
Test Conditions
IH
IH
to V
– 0.2 V, V
IH
IH
IH
, CE2= V
, CE2= V
– 0.2 V, V
IL
CC
CC
, CE2s = V
or V
, CE2 = V
or V
CC
= 3.0 V
= 3.3 V
IL
IH
IH
IL
, V
IH
or V
or V
, V
IO
IO
CC
IL:
IL:
IN
= V
= 0 mA,
CC
IL
= 3.3 V
IL
IL:
IL:
IL
≤ 0.2 V or
, Other
, CE2s =
SS
or OE# =
= 3.3 V
to V
CC
(Note 3)
–1.0
–1.0
–0.2
Min
2.2
2.2
Typ
12
3
V
(Note 2)
CC
Max
1.0
1.0
0.4
0.4
0.3
23
60
85
5
+0.2
Unit
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
35
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