M29W800DT-70N6E NUMONYX, M29W800DT-70N6E Datasheet

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M29W800DT-70N6E

Manufacturer Part Number
M29W800DT-70N6E
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M29W800DT-70N6E

Case
TSOP-48
Notes
NEW
Date_code
10+

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Part Number:
M29W800DT-70N6E
Manufacturer:
Numonyx
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Features
March 2008
Supply voltage
– V
Access times: 45, 70, 90 ns
Programming time
– 10 µs per byte/word typical
19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
Program/erase controller
– Embedded byte/word program algorithms
Erase suspend and resume modes
– Read and program another block during
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Common flash interface
– 64-bit security code
Low power consumption
– Standby and automatic standby
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh
read
erase suspend
CC
= 2.7 V to 3.6 V for program, erase and
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)
Rev 10
3 V supply flash memory
TFBGA48 (ZE)
TSOP48 (N)
12 x 20 mm
SO44 (M)
6 x 8 mm
M29W800DB
M29W800DT
FBGA
www.numonyx.com
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