SST29EE512-90-4C-NH Silicon Storage Technology, Inc, SST29EE512-90-4C-NH Datasheet

SST29EE512-90-4C-NH

Manufacturer Part Number

SST29EE512-90-4C-NH

Description

Manufacturer

Silicon Storage Technology, Inc

Datasheet

1.SST29EE512-90-4C-NH.pdf (26 pages)

Specifications of SST29EE512-90-4C-NH

Case

PLCC

Date_code

06+

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FEATURES:

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Fast Page-Write Operation

• Fast Read Access Time

• Latched Address and Data

PRODUCT DESCRIPTION

The SST29EE512 is a 64K x8 CMOS, Page-Write

EEPROM manufactured with SST’s proprietary, high-per-

formance CMOS SuperFlash technology. The split-gate

cell design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST29EE512 writes with a single

power supply. Internal Erase/Program is transparent to

the user. The SST29EE512 conforms to JEDEC stan-

dard pin assignments for byte-wide memories.

Featuring

SST29EE512 provides a typical Byte-Write time of 39

µsec. The entire memory, i.e., 64 KByte, can be written

page-by-page in as little as 2.5 seconds, when using

interface features such as Toggle Bit or Data# Polling to

indicate the completion of a Write cycle. To protect

against inadvertent write, the SST29EE512 have on-chip

hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum

of applications, the SST29EE512 is offered with a guar-

anteed Page-Write endurance of 10,000 cycles. Data

retention is rated at greater than 100 years.

S71060-09-000

– 4.5-5.5V for SST29EE512

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

– 128 Bytes per Page, 512 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 2.5 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

– 4.5-5.5V operation: 70 ns

high

512 Kbit (64K x8) Page-Write EEPROM

performance

SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories

9/05

Page-Write,

SST29EE512

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Automatic Write Timing

• End of Write Detection

• Hardware and Software Data Protection

• Product Identification can be accessed via

• TTL I/O Compatibility

• JEDEC Standard

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

The SST29EE512 is suited for applications that require

convenient and economical updating of program, config-

uration, or data memory. For all system applications, the

SST29EE512 significantly improves performance and

reliability, while lowering power consumption. The

SST29EE512 improves flexibility while lowering the cost

for program, data, and configuration storage applications.

To meet high density, surface mount requirements, the

SST29EE512 is offered in 32-lead PLCC and 32-lead

TSOP packages. A 600-mil, 32-pin PDIP package is also

available. See Figures 1, 2, and 3 for pin assignments.

Device Operation

The SST Page-Write EEPROM offers in-circuit electrical

write capability. The SST29EE512 does not require sepa-

rate Erase and Program operations. The internally timed

Write cycle executes both erase and program transparently

to the user. The SST29EE512 has industry standard

optional Software Data Protection, which SST recom-

mends always to be enabled. The SST29EE512 is com-

patible with industry standard EEPROM pinouts and

functionality.

– Internal V

– Toggle Bit

– Data# Polling

Software Operation

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 20mm)

– 32-pin PDIP

Generation

These specifications are subject to change without notice.

SSF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

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