STPS40L45C-Y STMICROELECTRONICS [STMicroelectronics], STPS40L45C-Y Datasheet - Page 2

• Manufacturer Part Number: STPS40L45C-Y
• Description: 7Automotive power Schottky rectifier
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Characteristics
1
2/7
Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously :
ΔT
Table 4.
1. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.28 x I
Symbol
Symbol
Symbol
I
R
V
F(RMS)
P
dV/dt
R
I
I
V
I
I
j
F(AV)
I
T
RRM
RSM
th (j-c)
FSM
(diode 1) = P(diode1) x R
R
RRM
ARM
th(c)
F
T
stg
dPtot
(1)
(1)
dTj
j
<
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Operating junction temperature
Critical rate of rise of reverse voltage
Junction to case
Coupling
Reverse leakage
current
Forward voltage drop
Rth(j-a)
F(AV)
1
p
Absolute ratings (limiting values, per diode)
Thermal resistances
Static electrical characteristics (per diode)
= 380 µs, δ < 2%
Parameter
+ 0.0105 I
condition to avoid thermal runaway for a diode on its own heatsink
F
2
th(j-c)
(RMS)
Doc ID 023224 Rev 1
T
T
T
T
T
T
j
j
j
j
j
j
(Per diode) + P(diode 2) x R
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Parameter
Parameter
Test conditions
(1)
V
I
I
I
I
T
δ = 0.5
t
t
t
t
F
F
F
F
p
p
p
p
R
c
= 20 A
= 20 A
= 40 A
= 40 A
= 2 µs square F = 1 kHz
= 10 ms sinusoidal
= 100 µs square
= 1 µs T
=130 °C
= V
RRM
j
= 25 °C
per diode
per device
Min.
Per diode
th(c)
Total
.
Typ.
0.42
140
0.6
-65 to + 150
-40 to + 150
10000
Value
Value
8100
230
1.5
0.8
0.1
STPS40L45C-Y
45
30
20
40
2
3
Max.
0.53
0.49
0.69
280
0.6
0.7
°C/W
°C/W
Unit
V/µs
Unit
Unit
mA
mA
°C
°C
W
V
A
A
A
A
A
V