STD1LNK60Z-1_06 MICROSEMI [Microsemi Corporation], STD1LNK60Z-1_06 Datasheet - Page 4

• Manufacturer Part Number: STD1LNK60Z-1_06
• Description: N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
• Manufacturer: MICROSEMI [Microsemi Corporation]

Electrical characteristics
4/14
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 8.
1.
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
d(on)
d(off)
GSO
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
(1)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward on Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Gate-source Braekdown
Voltage
Switching times
Source drain diode
Gate-source zener diode
Parameter
Parameter
Parameter
Rev 7
V
R
(see Figure 19)
I
I
di/dt = 100A/µs,
V
I
di/dt = 100A/µs,
V
Igs=±1mA (Open Drain)
SD
SD
SD
DD
DD
DD
G
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
Test Condictions
=4.7Ω, V
=0.8A, V
=0.8A,
=0.8A,
Test Condictions
Test Condictions
=300 V, I
=20V, Tj=25°C
=20V, Tj=150°C
GS
GS
D
= 0.4A,
=10V
=0
30
Min
Min.
Min.
Typ.
Typ.
135
216
140
224
Typ.
3.2
3.2
5.5
13
28
5
Max.
Max
Max.
0.8
2.4
1.6
Unit
Unit
Unit
nC
nC
ns
ns
V
ns
ns
ns
ns
A
A
V
A
A