STD1LNK60Z-1_06 MICROSEMI [Microsemi Corporation], STD1LNK60Z-1_06 Datasheet - Page 2

• Manufacturer Part Number: STD1LNK60Z-1_06
• Description: N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
• Manufacturer: MICROSEMI [Microsemi Corporation]

Electrical ratings
1
2/14
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2. I
Table 2.
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu
Table 3.
V
Symbol
Symbol
R
dv/dt
Symbol
R
ESD(G-D)
V
I
SD
P
DM
R
V
V
thj-case
T
thj-lead
E
DGR
T
I
I
I
TOT
GS
stg
thj-a
T
DS
AR
D
D
AS
J
≤0.3A, di/dt ≤200A/µs, V
(1)
l
(2)
Absolute maximum ratings
Thermal resistance
Avalanche data
Drain-Source Voltage (V
Drain-Gate Voltage (R
Gate-Source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
Maximum lead temperature for soldering
purpose
Avalanche Curent, Repetitive or Noy-Repetitive
(pulse width limited by Tj Max)
Single pulse avalanche Energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
DD
=80%V
Parameter
Parameter
C
GS
= 25°C
Parameter
(BR)DSS
GS
= 20KΩ)
Rev 7
= 0)
C
C
=100°C
= 25°C
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
IPAK
0.24
IPAK
0.8
0.5
3.2
25
100
275
--
5
-55 to 150
TO-92
0.25
Value
TO-92
0.3
± 30
600
600
800
3
4.5
Value
120
40
--
0.189
1.2
Value
260
0.8
SOT-223
60
SOT-223
0.26
37.87
0.3
3.3
--
--
(1)
W/°C
Unit
V/ns
°C/W
°C/W
°C/W
°C
Unit
W
V
V
V
A
A
A
V
Unit
°C
mJ
A