SP000082281 INFINEON [Infineon Technologies AG], SP000082281 Datasheet
SP000082281
Related parts for SP000082281
SP000082281 Summary of contents
Page 1
... Avalanche current, repetitive t MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 Product Summary for target applications Ordering Code Marking SP000082281 6R385P Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse ...
Page 2
Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous diode forward current 2) Diode pulse current 4) Reverse diode dv /dt Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy 5) related Effective output capacitance, time 6) related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge ...
Page 4
Power dissipation P =f(T ) tot C 100 Max. transient thermal impedance Z =f(t ) thJC P parameter: D 0.5 0.2 0.1 0.05 -1 ...
Page 5
Typ. output characteristics I =f =150 ° parameter Drain-source on-state resistance =10 ...
Page 6
Typ. gate charge V =f =5.2 A pulsed GS gate D parameter gate 11 Avalanche energy E =f =3.4 ...
Page 7
Typ. capacitances C =f MHz Ciss Coss 1 10 Crss 100 200 V Rev. 2.0 14 Typ. Coss stored energy ...
Page 8
Definition of diode switching characteristics Rev. 2.0 page 8 IPP60R385CP 2006-04-04 ...
Page 9
PG-TO220-3-1/TO220-3-21: Outlines Dimensions in mm/inches: Rev. 2.0 page 9 IPP60R385CP 2006-04-04 ...
Page 10
Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With ...