BGA612_08 INFINEON [Infineon Technologies AG], BGA612_08 Datasheet
BGA612_08
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BGA612_08 Summary of contents
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Edition 2008-04-24 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2008. © All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms ...
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BGA612, Silicon Germanium Broadband MMIC Amplifier Revision History: 2008-04-24, Rev. 2.1 Previous Version: 2003-11-04 Page Subjects (major changes since last revision) All New Chip Version with integrated ESD protection 5 Electrical Characteristics slightly changed 7-8 Figures updated All Document layout ...
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Silicon Germanium Broadband MMIC Amplifier Feature • Cascadable 50 -gain block • 3 dB-bandwidth 2.8 GHz with 17.5 dB typical gain at 1.0 GHz P • Compression point = 7 dBm at 2.0 GHz -1dB F • ...
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Maximum Ratings Table 1 Maximum ratings Parameter Device voltage Device current Current into pin In 1) Input power T Total power dissipation, < 105 °C S Junction temperature Ambient temperature range Storage temperature range ESD capability all pins (HBM: JESD22-A114) ...
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In Figure 2 Test Circuit for Electrical Characteristics and S-Parameter Data Sheet Bias-T In GND V D GND Out Top View Caution: Device Voltage Electrical Characteristics 135 Bias I D ...
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Measured Parameters 2 Power Gain | f( 5V 135 , I = 20mA CC Bias ...
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Device Current parameter in Bias [V] CC Noise figure 5V, R ...
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Package Information 0.3 Figure 3 Package Outline SOT343 Figure 4 Tape for SOT343 Data Sheet 2 ±0 +0.1 -0.05 +0.1 0.6 4x -0.05 0 Pin 1 2.15 9 Package Information 0.9 ...