M36P0R9060N0ZANE NUMONYX [Numonyx B.V], M36P0R9060N0ZANE Datasheet - Page 17

• Manufacturer Part Number: M36P0R9060N0ZANE
• Description: 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
• Manufacturer: NUMONYX [Numonyx B.V]

M36P0R9060N0
5
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 4., Operating and AC measurement
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 4.
Figure 4.
V
V
V
V
V
Ambient Operating Temperature
Load Capacitance (C
Impedance Output (Z
Output Circuit Protection Resistance (R)
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
DDF
CCP
DDQ
PPF
PPF
Supply Voltage
Supply Voltage (Factory environment)
Supply Voltage (Application environment)
Supply Voltage
Supply Voltage
Operating and AC measurement conditions
AC measurement I/O waveform
Parameter
L
0
)
)
V DDQ
0V
conditions. Designers should check that the
–0.4
Min
–30
Flash Memory
1.7
1.7
8.5
–
0 to V
V
DDQ
30
V
DDQ
DDQ
/2
1.95
1.95
Max
9.5
85
–
3
+0.4
V DDQ /2
50
50
5 DC and AC parameters
AI06161
Min
–30
1.7
1.7
–
–
–
0 to V
PSRAM
V
DDQ
30
DDQ
/2
Max
1.95
1.95
85
–
–
–
2
Unit
17/23
°C
pF
ns
V
V
V
V
V
Ω
Ω
V
V